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SiC Substrates for your Power Device Research!
Low micropipe defects are difficult to limit in large production of SiC substrates. These defects can Silicon Carbide Diode Power Devicerestrict silicon carbide power device ratings.
But our small production of SiC wafers helps reduce micropipe defects in 4H and 6H wafers thus increasing your SiC power device ratings!
Please let us know what micropipe defects specs you need for your SiC wafers.
| Crystal structure | N-type | SI |
| 6H-SiC Wurtzite ( Hexagonal) | Yes | Yes |
| 4H-SiC Wurtzite ( Hexagonal) | Yes | Yes |
| 3C-SiC Zinc blende (cubic) | ||
| SiC Epi wafer | Yes | Yes |